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| Bulletin I0114J 05/00 IR340LM..CS05CB SERIES FAST RECOVERY DIODES Junction Size: Wafer Size: VRRM Class: Passivation Process: Reference IR Packaged Part: Rectangular 350 x 230 mils 4" 1000 to 1200 V Glassivated MOAT 60EPF Series Major Ratings and Characteristics Parameters VFM V RRM Maximum Forward Voltage Reverse Breakdown Voltage Range Units 1300 mV Test Conditions TJ = 25C, IF = 60 A (1) 1000 to 1200 V TJ = 25C, I RRM = 100 A (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 100% Al, (20 m) 350 x 230 mils (8.89x5.84 mm) - see drawing 100 mm, with std. < 110 > flat 260 m 45 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR340LM..CS05CB Series Bulletin I0114J 05/00 Ordering Information Table Device Code IR 1 1 2 3 4 5 6 7 8 International Rectifier Device Chip Dimension in Mils 340 2 L 3 M 4 12 5 C 6 S05 7 CB 8 Type of Device: L = Wire Bondable Fast Recovery Diode Passivation Process: M = Glassivated MOAT Available Class Voltage code: Code x 100 = V RRM Metallization: C = Aluminium (Anode) - Silver (Cathode) Trr code: S05 = 500 nsec CB = Probed Uncut Die (wafer in box) 10 = 1000 V 12 = 1200 V None = Probed Die in chip carrier Outline Table All dimensions are in millimeters (mils) 2 www.irf.com IR340LM..CS05CB Series Bulletin I0114J 05/00 Wafer Layout TOP VIEW N 118 Basic Cells All dimensions are in millimeters www.irf.com 3 |
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